| PART |
Description |
Maker |
| 29F200C-55 29F200C-90 29F200C-70 |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 200万位[256Kx8/128Kx16]的CMOS闪存
|
Macronix International Co., Ltd.
|
| MX29F200CBMI-70G MX29F200CBMI-90 MX29F200CBTI-70G |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX27C2048PC-55 MX27C2048PC-90 MX27C2048QC-55 MX27C |
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PDIP40
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDIP40
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PQCC44
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 70 ns, PQCC44
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDSO40
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PQCC44
2M-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PDSO40
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| 27L2000-15 27L2000-25 27L2000-12 27L2000-20 27L200 |
2M-BIT [256Kx8] CMOS EPROM
|
Macronix International Co., Ltd.
|
| N02L63W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| V53C16126H V53C16126HK35 V53C16126HK60 V53C16126HT |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
DRAM|FAST PAGE|128KX16|CMOS|SOJ|40PIN|PLASTIC 内存|快速页面| 128KX16 |的CMOS | SOJ | 40PIN |塑料
High performance 128K x 16bit fast page mode CMOS dynamic RAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| K6T2008U2A K6T2008U2A-B K6T2008U2A-F K6T2008U2A-FF |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
|
Samsung semiconductor
|
| KM68U2000 KM68V2000 |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM68U2000A |
256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM) 256Kx8位低功耗和低电压的CMOS静态RAM56K × 8位低功耗和低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| BS616UV2019 BS616UV2019TIP85 BS616UV2019AC BS616UV |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit 超低功率/电压CMOS SRAM28K的16
020419-0023 超低功率/电压CMOS SRAM28K的16
Hex Buffer/Driver With Open-Drain Outputs 14-SOIC -40 to 85
JT 55C 55#20 SKT PLUG
Asynchronous 2M(128Kx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16
LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting
Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto...
Honeywell International, Inc.
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| W925C240 |
8-BIT MCU w/256Kx8 ROM, 8Kx8 RAM, 40 I/Os, CID Type I & II
|
Winbond Electronics
|
